LE CORRE Alain

Professor (02/2004-01/2024)

Team: Équipe OHM

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Building 10 – Office 003

🖃 INSA
20 avenue des Buttes de Coësmes
CS 70839
35708 Rennes Cedex 7

Publications

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254 documents

Journal articles58 document

  • Anwar Kerchaoui, Alexandru Mereuta, Andrei Caliman, Cyril Paranthoen, Christophe Levallois, et al.. Electrically pumped shot-noise limited class A VECSEL at telecom wavelength. Optics Letters, 2021, 46 (10), pp.2465-2468. ⟨10.1364/OL.412746⟩. ⟨hal-03362767⟩
  • Cyril Paranthoen, Christophe Levallois, Gaëlle Brevalle, Mathieu Perrin, Alain Le Corre, et al.. Low threshold 1550 nm emitting QD optically pumped VCSEL. IEEE Photonics Technology Letters, 2021, 33 (2), pp.69-72. ⟨10.1109/LPT.2020.3044457⟩. ⟨hal-03101472⟩
  • Anne Ponchet, Laurent Pedesseau, Alain Le Corre, Charles Cornet, Nicolas Bertru. Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate. Applied Physics Letters, 2019, 114 (17), pp.173102. ⟨10.1063/1.5091058⟩. ⟨hal-02119035⟩
  • Ida Lucci, Simon Charbonnier, L. Pedesseau, Maxime Vallet, Laurent Cerutti, et al.. Universal description of III-V/Si epitaxial growth processes. Physical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩. ⟨hal-01833206⟩
  • Dac-Trung Nguyen, Laurent Lombez, François Gibelli, Soline Boyer-Richard, Alain Le Corre, et al.. Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature. Nature Energy, 2018, 3, pp.236-242. ⟨10.1038/s41560-018-0106-3⟩. ⟨hal-02181013⟩
  • Fethallah Taleb, Salvatore Pes, Cyril Paranthoen, Christophe Levallois, Nicolas Chevalier, et al.. Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias. IEEE Photonics Technology Letters, 2017, 29 (13), pp.1105 - 1108. ⟨10.1109/LPT.2017.2703599⟩. ⟨hal-01582538⟩
  • Ronan Tremblay, Jean-Philippe Burin, Tony Rohel, Jean-Philippe Gauthier, Samy Almosni, et al.. MBE growth and doping of AlGaP. Journal of Crystal Growth, 2017, 466, pp.6-15. ⟨10.1016/j.jcrysgro.2017.02.011⟩. ⟨hal-01529569⟩
  • Yanping Wang, Julien Stodolna, Mounib Bahri, Jithesh Kuyyalil, Thanh Tra Nguyen, et al.. Abrupt GaP/Si hetero-interface using bistepped Si buffer. Applied Physics Letters, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩. ⟨hal-01228809⟩
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Mounib Bahri, Ludovic Largeau, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setup. Journal of Applied Crystallography, 2015, 48 (3), pp.702-710. ⟨10.1107/S1600576715009954⟩. ⟨hal-01157811⟩
  • Jean Rodière, Laurent Lombez, Alain Le Corre, Olivier Durand, Jean-François Guillemoles. Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures. Applied Physics Letters, 2015, 106 (18), pp.183901. ⟨10.1063/1.4919901⟩. ⟨hal-01166114⟩
  • Olivier Durand, Samy Almosni, Yanping Wang, C. Cornet, A. Létoublon, et al.. Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics. Energy Harvesting and Systems, 2014, 1 (3-4), pp.147-156. ⟨10.1515/ehs-2014-0008⟩. ⟨hal-01166477⟩
  • Kamil Klaime, Cosimo Calo, Rozenn Piron, Cyril Paranthoen, Dame Thiam, et al.. 23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers. Optics Express, 2013, 21 (23), pp.29000-29005. ⟨10.1364/OE.21.029000⟩. ⟨hal-01167812⟩
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster. Journal of Crystal Growth, 2013, 380, pp.157-162. ⟨10.1016/j.jcrysgro.2013.05.022⟩. ⟨hal-00918659⟩
  • Fethallah Taleb, Christophe Levallois, Cyril Paranthoën, Jean-Philippe Gauthier, Nicolas Chevalier, et al.. VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span. IEEE Photonics Technology Letters, 2013, 25 (21), pp.2126-2128. ⟨10.1109/LPT.2013.2282084⟩. ⟨hal-00874033⟩
  • Thanh Tra Nguyen, Cédric Robert Robert, Antoine Létoublon, Charles Cornet, Thomas Quinci, et al.. Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers. Thin Solid Films, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III, 541, pp.36-40. ⟨10.1016/j.tsf.2012.11.116⟩. ⟨hal-00788396⟩
  • Cédric Robert Robert, Thanh Tra Nguyen, Antoine Létoublon, Mathieu Perrin, C. Cornet, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications. Thin Solid Films, 2013, 541, pp.87-91. ⟨hal-02050606⟩
  • Olivier Durand, Cédric Robert Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, et al.. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications. Proceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩. ⟨hal-00842763⟩
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Antoine Létoublon, et al.. Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN. Journal of Crystal Growth, 2013, 377, pp.17-21. ⟨10.1016/j.jcrysgro.2013.04.052⟩. ⟨hal-00918658⟩
  • Samy Almosni, Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journal of Applied Physics, 2013, 113 (12), pp.123509. ⟨10.1063/1.4798363⟩. ⟨hal-00918663⟩
  • Jean-Philippe Gauthier, Cyril Paranthoën, Christophe Levallois, Ahmad Shuaib, Jean-Michel Lamy, et al.. Enhancement of the polarization stability of a 1.55 µm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes. Optics Express, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩. ⟨hal-00717931⟩
  • Salman Salman, Hervé Folliot, Julie Le Pouliquen, Nicolas Chevalier, Tony Rohel, et al.. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate. Materials Science and Engineering: B, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩. ⟨hal-00698574⟩
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Tony Rohel, et al.. Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys. Applied Physics Letters, 2012, 101 (25), pp.251906. ⟨10.1063/1.4772785⟩. ⟨hal-00788403⟩
  • Weiming Guo, Alexandre Bondi, Charles Cornet, Antoine Létoublon, Olivier Durand, et al.. Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering. Applied Surface Science, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩. ⟨hal-00654301⟩
  • Cédric Robert Robert, Charles Cornet, Pascal Turban, Thanh Tra Nguyen, Mikhail O. Nestoklon, et al.. Electronic, optical and structural properties of (In,Ga)As/GaP quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86, pp.205316. ⟨10.1103/PhysRevB.86.205316⟩. ⟨hal-00726726⟩
  • Thanh Tra Nguyen, Cédric Robert Robert, Weiming Guo, Antoine Létoublon, Charles Cornet, et al.. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon. Journal of Applied Physics, 2012, 112 (5), pp.053521. ⟨10.1063/1.4751024⟩. ⟨hal-00726722⟩
  • Madhoussoudhana Dontabactouny, Rozenn Piron, Kamil Klaime, Nicolas Chevalier, Karine Tavernier, et al.. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band. Journal of Applied Physics, 2012, 111, pp.23102. ⟨10.1063/1.3677976⟩. ⟨hal-00662698⟩
  • Thanh Tra Nguyen, Cédric Robert Robert, Charles Cornet, Mathieu Perrin, Jean-Marc Jancu, et al.. Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots. Applied Physics Letters, 2011, 99, pp.143123. ⟨10.1063/1.3646911⟩. ⟨hal-00654296⟩
  • Cédric Robert Robert, Alexandre Bondi, Thanh Tra Nguyen, Jacky Even, Charles Cornet, et al.. Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen. Applied Physics Letters, 2011, 98, pp.251110. ⟨10.1063/1.3601857⟩. ⟨hal-00654272⟩
  • Ahmad Shuaib, Christophe Levallois, Jean-Philippe Gauthier, Cyril Paranthoen, Olivier Durand, et al.. Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications. Thin Solid Films, 2011, 519 (18), pp.6178-6182. ⟨10.1016/j.tsf.2011.04.111⟩. ⟨hal-00600697⟩
  • Hanond Nong, Maud Gicquel-Guézo, Laurent Bramerie, Mathieu Perrin, Frédéric Grillot, et al.. Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2011, 50 (04), pp.0206. ⟨10.1143/JJAP.50.040206⟩. ⟨hal-00596902⟩
  • A. Letoublon, Weiming Guo, C. Cornet, Alexandre Boulle, M. Veron, et al.. X-ray study of antiphase domains and their stability in MBE grown GaP on Si.. Journal of Crystal Growth, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. ⟨10.1016/j.jcrysgro.2010.10.137⟩. ⟨hal-00692315⟩
  • Cheng Fang, Alain Le Corre, Dominique Yon. Copper electroplating into deep microvias for the “SiP” application. Microelectronic Engineering, 2010, The 2010 International workshop on “Materials for Advanced Metallization” - MAM 2010, 88 (5), pp.749-753. ⟨10.1016/j.mee.2010.07.034⟩. ⟨hal-01166220⟩
  • Wei Lu, Tony Rohel, Nicolas Bertru, Hervé Folliot, Cyril Paranthoën, et al.. Achievement of InSb Quantum Dots on InP(100) Substrates. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩. ⟨hal-00489868⟩
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Boyer-Richard, Hervé Folliot, et al.. Light emitting diodes on silicon substrates: preliminary results. physica status solidi (c), 2009, 6 (10), pp.2212-2216. ⟨10.1002/PSSC.200881728⟩. ⟨hal-00665750⟩
  • Jean-Michel Lamy, Cyril Paranthoën, Christophe Levallois, Abdulhadi Nakkar, Hervé Folliot, et al.. Polarization control of 1.6 µm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001). Applied Physics Letters, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩. ⟨hal-00485689⟩
  • Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Abdulhadi Nakkar, et al.. Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (7), pp.70204. ⟨10.1143/JJAP.48.070204⟩. ⟨hal-00485726⟩
  • Laurent Pedesseau, Jacky Even, Alexandre Bondi, Weiming Guo, Soline Richard, et al.. Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD. Journal of Physics D: Applied Physics, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩. ⟨hal-00491451⟩
  • Abdulhadi Nakkar, Hervé Folliot, Alain Le Corre, Philippe Caroff, François Doré, et al.. Optical properties and morphology of InAs/InP (113B) surface quantum dots. Applied Physics Letters, 2008, 92 (23), pp.231911. ⟨10.1063/1.2943651⟩. ⟨hal-00486830⟩
  • Jean-Michel Lamy, Soline Richard, Christophe Levallois, Cyril Paranthoen, Hervé Folliot, et al.. Design of an InGaAs/InP 1.55 µm electrically pumped VCSEL. Optical and Quantum Electronics, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩. ⟨hal-00483143⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2007, 46 (10A), pp.6903-6905. ⟨10.1143/JJAP.46.6903⟩. ⟨hal-00493021⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer. Semiconductor Science & Technology, 2007, 22, pp.827-830. ⟨10.1088/0268-1242/22/7/028⟩. ⟨hal-00493037⟩
  • Ibrahim Alghoraibi, Tony Rohel, Rozenn Piron, Nicolas Bertru, Cyril Paranthoën, et al.. Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates. Applied Physics Letters, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩. ⟨hal-00485705⟩
  • Christophe Levallois, Bertrand Caillaud, Jean-Louis de Bougrenet de La Tocnaye, Laurent Dupont, Alain Le Corre, et al.. Long-wavelength Vertical-Cavity Surface-Emitting Laser using an electro-optic index modulator with 10-nm tuning range. Applied Physics Letters, 2006, 89 (1), pp.11102. ⟨10.1063/1.2219144⟩. ⟨hal-00489110⟩
  • Christophe Levallois, Alain Le Corre, Olivier Dehaese, Hervé Folliot, Cyril Paranthoen, et al.. Design and Fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors. Optical and Quantum Electronics, 2006, 38 (4-6), pp.281-291. ⟨10.1007/s11082-006-0029-2⟩. ⟨hal-00488026⟩
  • Charles Cornet, Christophe Labbé, Hervé Folliot, Philippe Caroff, Christophe Levallois, et al.. Time-resolved pump probe of 1.55 µm InAs/InP quantum dots under high resonant excitation. Applied Physics Letters, 2006, 88, pp.171502. ⟨10.1063/1.2199454⟩. ⟨hal-00491485⟩
  • Christophe Levallois, Bertrand Caillaud, Jean-Louis de Bougrenet de La Tocnaye, Laurent Dupont, Alain Le Corre, et al.. Nano-polymer-dispersed liquid crystal as phase modulator for a tunable vertical-cavity surface-emitting laser at 1.55 μm. Applied optics, 2006, 45 (33), pp.8484-8490. ⟨10.1364/AO.45.008484⟩. ⟨hal-00490837⟩
  • Adalberto Brunetti, Maria Vladimirova, Denis Scalbert, Hervé Folliot, Alain Le Corre. Effect of holes on the dynamic polarization of nuclei in semiconductors. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.121202. ⟨10.1103/PhysRevB.73.121202⟩. ⟨hal-00440491⟩
  • Ibrahim Alghoraibi, Tony Rohel, Nicolas Bertru, Alain Le Corre, Antoine Letoublon, et al.. Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited. Journal of Crystal Growth, 2006, 293, pp.263. ⟨10.1016/j.jcrysgro.2006.05.046⟩. ⟨hal-00485589⟩
  • Charles Cornet, François Doré, A. Ballestar, Jacky Even, Nicolas Bertru, et al.. InAsSb/InP quantum dots for midwave infrared emitters: A theoretical study. Journal of Applied Physics, 2005, 98, pp.126105. ⟨10.1063/1.2143115⟩. ⟨hal-00504387⟩
  • Charles Cornet, Christophe Levallois, Philippe Caroff, Hervé Folliot, Christophe Labbé, et al.. Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence. Applied Physics Letters, 2005, 87, pp.233111. ⟨10.1063/1.2132527⟩. ⟨hal-00504390⟩
  • Christophe Levallois, Alain Le Corre, Slimane Loualiche, Olivier Dehaese, Hervé Folliot, et al.. Si wafer bonded of a-Si/a-SiNx distributed Bragg reflectors for 1.55-µm wavelength vertical cavity surface emitting lasers. Journal of Applied Physics, 2005, 98 (4), pp.043107. ⟨10.1063/1.2009075⟩. ⟨hal-00488055⟩
  • Charles Cornet, Charly Platz, Philippe Caroff, Jacky Even, Christophe Labbé, et al.. Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.035342. ⟨10.1103/PhysRevB.72.035342⟩. ⟨hal-00504376⟩
  • Charly Platz, Cyril Paranthoën, Philippe Caroff, Nicolas Bertru, Christophe Labbé, et al.. Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection. Semiconductor Science and Technology, 2005, Vol.20 (n°5), pp.459-463. ⟨10.1088/0268-1242/20/5/023⟩. ⟨hal-00145858⟩
  • Philippe Caroff, Cyril Paranthoën, Charly Platz, Olivier Dehaese, Hervé Folliot, et al.. High-gain and low-threshold InAs quantum-dot lasers on InP. Applied Physics Letters, 2005, 87, pp.243107. ⟨10.1063/1.2146063⟩. ⟨hal-00485764⟩
  • Philippe Caroff, Nicolas Bertru, Alain Le Corre, Olivier Dehaese, Tony Rohel, et al.. Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm. Japanese Journal of Applied Physics, part 2 : Letters, 2005, 44, pp.1069. ⟨10.1143/JJAP.44.L1069⟩. ⟨hal-00486146⟩
  • Philippe Caroff, Nicolas Bertru, Charly Platz, Olivier Dehaese, Alain Le Corre, et al.. Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates. Journal of Crystal Growth, 2005, 273, pp.357. ⟨10.1016/j.jcrysgro.2004.09.031⟩. ⟨hal-00486138⟩
  • Charles Cornet, Christophe Labbé, Hervé Folliot, Nicolas Bertru, Olivier Dehaese, et al.. Quantitative investigations of optical absorption in InAs/InP (311…)B quantum dots emitting at 1.55 µm wavelength. Applied Physics Letters, 2004, 85 (23), pp.5685. ⟨10.1063/1.1832750⟩. ⟨hal-00504369⟩
  • Cyril Paranthoën, Nicolas Bertru, Bertrand Lambert, Olivier Dehaese, Alain Le Corre, et al.. Room Temperature Laser Emission of 1.5 µm from InAs/InP(311)B Quantum Dots. Semiconductor Science and Technology, 2002, Vol.17 (n° 2), pp.L5-L7. ⟨10.1088/0268-1242/17/2/102⟩. ⟨hal-00145613⟩

Conference papers182 document

  • Anwar Kerchaoui, Alexandru Mereuta, Andrei Caliman, Steve Bouhier, Thomas Batte, et al.. Fonctionnement Classe A faible bruit d'un laser VECSEL injecté électriquement et émettant à 1,5 µm. OPTIQUE Dijon 2021, Jul 2021, Dijon, France. ⟨hal-03386466⟩
  • Anwar Kerchaoui, Alexandru Mereuta, Andrei Caliman, Steve Bouhier, Thomas Batte, et al.. Fonctionnement Classe A faible bruit d'un laser VECSEL injecté électriquement et émettant à 1,5 µm. Journée du Club Optique et Micro-ondes (JCOM 2021), Jun 2021, Paris, France. ⟨hal-03386462⟩
  • Anwar Kerchaoui, Alexandru Mereuta, Andrei Caliman, Steve Bouhier, Thomas Batte, et al.. Shot-Noise-Limited Operation of Electrically-Pumped Quantum Wells-Based VECSEL Emitting at Telecom Wavelength. International Conference / Nature Inspires Creativity Engineers (N.I.C.E 2020), Oct 2020, Nice, France. ⟨hal-03386475⟩
  • Hamidreza Esmaielpour, Daniel Suchet, Laurent Lombez, Amaury Delamarre, Soline Boyer-Richard, et al.. Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications. 47th Photovoltaic Specialists Conference (PVSC 2020), Jun 2020, Calgary (virtual), Canada. pp.0747-0751, ⟨10.1109/PVSC45281.2020.9300544⟩. ⟨hal-03223077⟩
  • Cyril Paranthoen, Christophe Levallois, Nicolas Chevalier, Alain Le Corre, Gaëlle Brévalle, et al.. 1545 nm Quantum Dot Vertical Cavity Surface Emitting Laser with low threshold. Compound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France. ⟨hal-02290603⟩
  • Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, et al.. A universal mechanism to describe III-V epitaxy on Si. 20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany. ⟨hal-02048639⟩
  • Laurent Lombez, Dac-Trung Nguyen, François Gibelli, Julie Goffard, Andrea Cattoni, et al.. Experimental investigation of performances enhancement in hot carrier solar cells: improvements and perspectives (Conference Presentation). SPIE Photonics West - OPTO 2019, Feb 2019, San Francisco, United States. pp.109130E, ⟨10.1117/12.2513178⟩. ⟨hal-02402232⟩
  • Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, et al.. A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S). ⟨hal-01910554⟩
  • Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, et al.. III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation. 34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. ⟨hal-01910543⟩
  • Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, et al.. A general III-V/Si growth process description. European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. ⟨hal-01910535⟩
  • Ronan Tremblay, Tony Rohel, Alain Le Corre, Rozenn Bernard, Nicolas Bertru, et al.. Optical properties of GaP/Si active microdisks containing InGaAs/GaP quantum dots. Nanophotonics and Micro/Nano Optics International Conference 2017 (NANOP 2017), Prem C, Sep 2017, Barcelona, Spain. ⟨hal-01707877⟩
  • Dac-Trung Nguven, Laurent Lombez, François Gibelli, Soline Boyer-Richard, Alain Le Corre, et al.. Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell. 44th IEEE Photovoltaic Specialists Conference (PVSC 2017), Jun 2017, Washington, United States. pp.2192-2194, ⟨10.1109/PVSC.2017.8366530⟩. ⟨hal-02402286⟩
  • Mickael da Silva, Charles Cornet, Antoine Létoublon, Christophe Levallois, Alain Rolland, et al.. First stage results on III-V/Si tandem cells using GaAsPN dilute-nitride. European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France. ⟨hal-01496924⟩
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium. Rayons X & Matière 2015, Dec 2015, Grenoble, France. ⟨hal-01497228⟩
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, G. Patriarche, Anne Ponchet, et al.. Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics. European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France. ⟨hal-01497220⟩
  • Olivier Durand, Samy Almosni, Mickael da Silva, Pierre Rale, Alain Le Corre, et al.. Towards the III-V/Si CPV on Si substrates. European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France. ⟨hal-01403375⟩
  • Olivier Durand, Samy Almosni, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cell. SPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. ⟨hal-01497194⟩
  • Olivier Durand, Samy Almosni, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/Si. Matériaux 2014, Nov 2014, Montpellier, France. ⟨hal-01115312⟩
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur Si. Réunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France. ⟨hal-01137337⟩
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Julien Stodolna, Nicolas Bertru, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon. 12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France. ⟨hal-01115004⟩
  • Olivier Durand, Yanping Wang, Samy Almosni, Mounib Bahri, Julien Stodolna, et al.. Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon. 6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania. ⟨hal-01114912⟩
  • Laurent Lombez, Jean Rodière, Jean-Francois Guillemoles, Alain Le Corre, Hervé Folliot, et al.. Accurate measurement of temperature and electrochemical potential of InGaAsPlInP heterostructures: a first indication of hot carriers solar cell operation. 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC 2014), Jun 2014, Denver, United States. ⟨hal-01166777⟩
  • Olivier Durand, Samy Almosni, Pierre Râle, J. Rodière, Yanping Wang, et al.. Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substrates. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. ⟨hal-01115019⟩
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Low cristalline defect density in GaP/Si nanolayers. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. ⟨hal-01115024⟩
  • Jean Rodière, Laurent Lombez, Jean-Francois Guillemoles, Hervé Folliot, Alain Le Corre, et al.. Characterization of InP/InGaAsP-multi-quantum-wells heterostructures for high efficiency solar energy conversion. Compound Semiconductor Week 2014 - 41st International Symposium on Compound Semiconductors (ISCS 2014), May 2014, Montpellier, France. ⟨hal-01166784⟩
  • Cédric Robert Robert, Charles Cornet, Thanh Tra Nguyen, M. Nestoklon, Katiane Pereira da Silva, et al.. Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩. ⟨hal-01114877⟩
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Abrupt heterointerface and low defect density in GaP/Si nanolayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. ⟨hal-01115278⟩
  • Thomas Quinci, Renaud Varache, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approach. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. ⟨hal-00918767⟩
  • Samy Almosni, Cédric Robert Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandem. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. ⟨hal-00918758⟩
  • Charles Cornet, Pascal Turban, Cédric Robert Robert, Sylvain Tricot, Mathieu Perrin, et al.. Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiques. Journées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France. ⟨hal-00918787⟩
  • Antoine Létoublon, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, Charles Cornet, et al.. Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/Si. Xème colloque rayons X et matière, Nov 2013, Nantes, France. ⟨hal-00918790⟩
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium. Xème colloque rayons X et matière, Nov 2013, Nantes, France. ⟨hal-00918791⟩
  • Olivier Durand, Samy Almosni, Cédric Robert Robert, Thanh Tra Nguyen, Yanping Wang, et al.. Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated Photovoltaics. International Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France. ⟨hal-00918754⟩
  • Olivier Durand, Thanh Tra Nguyen, Yanping Wang, Antoine Létoublon, Charles Cornet, et al.. Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications. 15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania. ⟨hal-00918793⟩
  • Alain Rolland, Laurent Pedesseau, Jacky Even, Samy Almosni, Cédric Robert Robert, et al.. Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate. 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. pp.1397-1403, ⟨10.1007/s11082-014-9909-z⟩. ⟨hal-00951949⟩
  • Charles Cornet, Tony Rohel, Olivier Dehaese, Nicolas Chevalier, Antoine Létoublon, et al.. Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/Si. Réunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France. ⟨hal-00918749⟩
  • Julien Stodolna, François Demangeot, Anne Ponchet, Nicolas Bertru, Olivier Durand, et al.. Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001). Réunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France. ⟨hal-00918748⟩
  • Charles Cornet, Cédric Robert Robert, Samy Almosni, Thanh Tra Nguyen, Thomas Quinci, et al.. GaAsPN compounds for Si photonics. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. ⟨hal-00918743⟩
  • Fethallah Taleb, Christophe Levallois, Cyril Paranthoën, Jean-Philippe Gauthier, Nicolas Chevalier, et al.. 1.55 μm VCSEL based on InAs quantum-dashes with an emission covering 105 nm wavelength range. Euro VCSEL-DAY 2013, May 2013, Lausanne, Switzerland. ⟨hal-00920834⟩
  • Cédric Robert Robert, Charles Cornet, Olivier Durand, K. Pereira da Silva, Pascal Turban, et al.. gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs). European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France. ⟨hal-00918730⟩
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth for tandem solar cells. 4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France. ⟨hal-00918732⟩
  • Charles Cornet, Cédric Robert Robert, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Intégration optique par croissance directe de nanostructures III-V sur silicium. 14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France. ⟨hal-00918745⟩
  • Fethallah Taleb, Cyril Paranthoën, Christophe Levallois, Jean-Philippe Gauthier, Nicolas Chevalier, et al.. VCSEL à fils quantiques présentant une émission laser de 1647 à 1542 nm. 14èmes Journées Nano, Micro et Optoélectronique, May 2013, Evian, France. ⟨hal-00953001⟩
  • Cyril Paranthoën, Christophe Levallois, Jean-Philippe Gauthier, Fethallah Taleb, Nicolas Chevalier, et al.. 1540 to 1645 nm continuous VCSEL emission based on quantum dashes. 25th International Conference on Indium Phosphide and Related Materials (IPRM), May 2013, Kobe, Japan. pp.1-2, ⟨10.1109/ICIPRM.2013.6562594⟩. ⟨hal-00874600⟩
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth cluster for III-N-V/Si solar cells. Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan. ⟨hal-00918735⟩
  • Cédric Robert Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, et al.. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. Compound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan. ⟨hal-00918734⟩
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Jithesh Kuyyalil, et al.. Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloys. euro-MBE conference, Mar 2013, Levi, Finland. ⟨hal-00918668⟩
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Charles Cornet, Antoine Létoublon, et al.. Growth of GaP on biatomic Si steps using a UHVCVD-MBE cluster. euro-MBE conference, Mar 2013, Levi, Finland. ⟨hal-00918666⟩
  • Cédric Robert Robert, Charles Cornet, Pascal Turban, S. Mauger, Thanh Tra Nguyen, et al.. Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium composition. euro-MBE conference, Mar 2013, Levi, Finland. ⟨hal-00918669⟩
  • Kamil Klaime, Rozenn Piron, Frederic Grillot, Madhoussoudhana Dontabactouny, Slimane Loualiche, et al.. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers. SPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. pp.863407, ⟨10.1117/12.2005244⟩. ⟨hal-01167250⟩
  • Thanh Tra Nguyen, Cédric Robert Robert, Emmanuel Giudicelli, Antoine Létoublon, Charles Cornet, et al.. Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates. 17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. pp.25-28, ⟨10.1016/j.jcrysgro.2012.11.046⟩. ⟨hal-00788399⟩
  • Kamil Klaime, Rozenn Piron, Cyril Paranthoën, Thomas Batte, Frederic Grillot, et al.. High Frequency Quantum Dots Mode Locked Laser for Telecommunication Applications. European Semiconductor Laser Workshop (ESLW 2012), Sep 2012, Brussels, Belgium. ⟨hal-00806320⟩
  • Kamil Klaime, Rozenn Piron, Cyril Paranthoen, Thomas Batte, Frederic Grillot, et al.. 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. 24th International Conference on Indium Phosphide and Related Materials (IPRM 2012), Aug 2012, Santa Barbara, United States. pp.181-184, ⟨10.1109/ICIPRM.2012.6403352⟩. ⟨hal-00726881⟩
  • Cosimo Calo, Kamel Merghem, Ricardo Rosales, Anthony Martinez, Abderrahim Ramdane, et al.. Self Pulsation in Quantum Dot lasers operating at 1.55 μm based on (311)B substrates. International Nano-Optoelectronics Workshop 2012, Aug 2012, Berkeley, United States. pp.1. ⟨hal-00726928⟩
  • Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. (In,Ga)As/GaP quantum dots for monolithic integration on silicon. 31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. ⟨hal-00726878⟩
  • Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. Theoretical and experimental study of (In,Ga)As/GaP quantum dots. International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩. ⟨hal-00726861⟩
  • Samy Almosni, Cédric Robert Robert, Charles Cornet, Christophe Levallois, Thomas Quinci, et al.. Potentiality of GaAsPN and InGaPN for photovoltaic applications. 3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France. ⟨hal-00726855⟩
  • Alexandre Bondi, Charles Cornet, Soline Richard, Thanh Tra Nguyen, Antoine Létoublon, et al.. Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩. ⟨hal-00788308⟩
  • Cédric Robert Robert, Thanh Tra Nguyen, Mathieu Perrin, Charles Cornet, Antoine Létoublon, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩. ⟨hal-00918657⟩
  • Thanh Tra Nguyen, Cédric Robert Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si. Photonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩. ⟨hal-00654337⟩
  • Samy Almosni, Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. InGaPN and GaAsPN layers for tandem solar cells on silicon. European materials research society international conference (EMRS), 2012, Strasbourg, France. ⟨hal-00726850⟩
  • Laurent Pedesseau, Jacky Even, Jean-Marc Jancu, Eric Tea, Charles Cornet, et al.. Contribution of DFT code to photovoltaic applications. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. ⟨hal-00788493⟩
  • Cédric Robert Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, Mathieu Perrin, et al.. Dilute nitride GaNAsP for photonic applications on silicon. International Symposium on nitrides (ISNT), 2012, saint-Malo, France. ⟨hal-00726885⟩
  • Charles Cornet, Pascal Turban, Cédric Robert Robert, Thanh Tra Nguyen, Sylvain Tricot, et al.. Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphology. international conference on superlattice, nanostructures and nanodevices (ICSNN), 2012, Dresden, Germany. ⟨hal-00726864⟩
  • Samy Almosni, Pierre Râle, Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France. ⟨hal-00788478⟩
  • Samy Almosni, Cédric Robert Robert, Thomas Quinci, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cells. international conference on MBE, 2012, Japan. ⟨hal-00726772⟩
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. coherent integration of photonics on silicon through the growth of GaP/Si. Technical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany. ⟨hal-00788526⟩
  • Olivier Durand, Samy Almosni, Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. ⟨hal-00788544⟩
  • Cédric Robert Robert, Charles Cornet, Pascal Turban, Thanh Tra Nguyen, Sylvain Tricot, et al.. Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening process. international conference on MBE, 2012, Nara, Japan. ⟨hal-00726776⟩
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE cluster. Journées nationales du photovoltaïque 2012, 2012, Chantilly, France. ⟨hal-00788460⟩
  • Cédric Robert Robert, Charles Cornet, Thanh Tra Nguyen, Mathieu Perrin, Antoine Létoublon, et al.. Développement d'un laser sur silicium dans l'approche pseudomorphique. Journées nationales de l'optique guidée, 2012, Lyon, France. ⟨hal-00788434⟩
  • Olivier Castany, Cyril Paranthoën, Christophe Levallois, Ahmad Shuaib, Jean-Philippe Gauthier, et al.. A 34 nm monolithic continuously tunable VCSEL at 1.55 µm. European Semiconductor Laser Workshop 2011, Sep 2011, Lausanne, Switzerland. ⟨hal-00662811⟩
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate. 3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", Sep 2011, Bucharest, Romania. ⟨hal-00726686⟩
  • Salman Salman, Hervé Folliot, Julie Le Pouliquen, Nicolas Chevalier, Tony Rohel, et al.. Thermoelectric properties of InAs/InP nanostructures. Euromat 2011, Sep 2011, Montpellier, France. ⟨hal-00663177⟩
  • Salman Salman, Hervé Folliot, Julie Le Pouliquen, Nicolas Chevalier, Tony Rohel, et al.. Thermoelectric properties of InAs/InP nanostructures. Microtechnology and Thermal Problems in Electronics (Microthem 2011), Jun 2011, Lodz, Poland. ⟨hal-00663179⟩
  • Thanh Tra Nguyen, Cédric Robert Robert, Charles Cornet, Pascal Turban, Sylvain Tricot, et al.. Single InAs/InP quantum dashes and dots morphology on (001) and (113)B substrates. Journées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France. ⟨hal-00654323⟩
  • Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, Nicolas Bertru, Nicolas Chevalier, et al.. Room temperature photoluminescence if InxGa1-xAs quantum dots on GaP substrate. Journées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France. ⟨hal-00654317⟩
  • Madhoussoudhana Dontabactouny, Rozenn Piron, Kamil Klaime, Nicolas Chevalier, Karine Tavernier, et al.. 10.6 GHz InAs/InP quantum dash two-section passively mode-locked lasers in L band.. Journées Boîtes Quantiques - Quantum Dots France, Jun 2011, Toulouse, France. ⟨hal-00662957⟩
  • Olivier Castany, Cyril Paranthoen, Christophe Levallois, Ahmad Shuaib, Jean-Philippe Gauthier, et al.. Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystal. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. ⟨hal-00609330⟩
  • Charles Cornet, Cédric Robert Robert, Thanh Tra Nguyen, Weiming Guo, Alexandre Bondi, et al.. Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1. ⟨hal-00654285⟩
  • Weiming Guo, Thanh Tra Nguyen, Georges Elias, Antoine Létoublon, Charles Cornet, et al.. Structural charaterisation of GaP/Si nanolayers. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4. ⟨hal-00654292⟩
  • Jean-Philippe Gauthier, Christophe Levallois, Cyril Paranthoën, Ahmad Shuaib, Nicolas Chevalier, et al.. Polarization properties of a quantum dashes VCSEL under a low frequency modulation. VCSEL Day 2011 (4th European Workshop on VCSELs), May 2011, Toulouse, France. ⟨hal-00662865⟩
  • Weiming Guo, Thanh Tra Nguyen, Antoine Létoublon, Georges Elias, Charles Cornet, et al.. Structural characterisation of GaP/Si nanolayers. European Materials Research Society 2011, May 2011, Strasbourg, France. ⟨hal-00654330⟩
  • Weiming Guo, Georges Elias, Antoine Létoublon, Charles Cornet, Anne Ponchet, et al.. structural characterization of MBE grown GaP/Si nanolayers. euro-MBE, Mar 2011, Alpe d'Huez, France. ⟨hal-00654309⟩
  • Charles Cornet, Pascal Turban, Nicolas Bertru, Sylvain Tricot, Olivier Dehaese, et al.. Single InAs quantum dots morphology and local electronic properties on (113)B InP substrate. euro-MBE, Mar 2011, Alpe d'Huez, France. ⟨hal-00654305⟩
  • Alexandre Bondi, Charles Cornet, Weiming Guo, Olivier Dehaese, Nicolas Chevalier, et al.. MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diode. euro-MBE 2011, Mar 2011, Alpe d'Huez, France. ⟨hal-00654313⟩
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit. Photonics West, Jan 2011, San Fransisco, United States. pp.79400L, ⟨10.1117/12.877661⟩. ⟨hal-00654279⟩
  • Christophe Levallois, Jean-Philippe Gauthier, Cyril Paranthoen, Rozenn Piron, Frederic Grillot, et al.. Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emission. Workshop Frontier 2010, Dec 2010, Albi, France. ⟨hal-00589343⟩
  • Olivier Castany, Laurent Dupont, Cyril Paranthoen, Christophe Levallois, Alain Le Corre, et al.. Liquid crystal micro-cells for tunable VCSELs. Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE 10), Nov 2010, Palaiseau, France. pp.P26. ⟨hal-00565929⟩
  • Olivier Castany, Laurent Dupont, Ahmad Shuaib, Jean-Philippe Gauthier, Christophe Levallois, et al.. Tunable VCSEL with intracavity liquid crystal layer. 3rd Scientific EOS Annual Meeting (EOSAM 2010), Oct 2010, Paris, France. ⟨hal-00565932⟩
  • Jean-Philippe Gauthier, Cyril Paranthoen, Christophe Levallois, Jean-Michel Lamy, Hervé Folliot, et al.. Caractérisation dynamique de la stabilité de polarisation des VCSELs à fils quantiques pour les applications télécom. JNOG 2010 : 29e journées nationales d'optique guidée, Oct 2010, Besançon, France. ⟨hal-00565930⟩
  • Rozenn Piron, Olivier Dehaese, Frederic Grillot, Estelle Homeyer, Dayong Zhou, et al.. Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µm. Séminaire PONANT 2010, Jul 2010, Rennes, France. ⟨hal-00662947⟩
  • Charles Cornet, Antoine Létoublon, Weiming Guo, Alexandre Bondi, Soline Richard, et al.. Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur silicium. Séminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11. ⟨hal-00504506⟩
  • Jean-Philippe Gauthier, Cyril Paranthoen, Christophe Levallois, Jean-Michel Lamy, Hervé Folliot, et al.. Caractérisation dynamique de la stabilité de polarisation des VCSELs a fils quantiques pour la réalisation de sources telecom accordables. Séminaire PONANT 2010, Jul 2010, Rennes, France. pp.15-17. ⟨hal-00589384⟩
  • Charles Cornet, Antoine Létoublon, Julien Lapeyre, Cyril Paranthoen, Christophe Levallois, et al.. caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomique. Journées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1. ⟨hal-00504500⟩
  • Rozenn Piron, Madhoussoudhana Dontabactouny, C. Rosenberg, E. Semenova, D. Larsson, et al.. Monolithic 1.59 µm InAs/InP quantum dash passively mode-locked lasers. Advances in Molecular Nonlinear Optics : Information Technology and Life Sciences (AMARIS'10), May 2010, Cachan, France. ⟨hal-00662940⟩
  • Alexandre Bondi, Weiming Guo, Hervé Folliot, Charles Cornet, Nicolas Chevalier, et al.. Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaP. INNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1. ⟨hal-00504484⟩
  • Jacky Even, Frederic Grillot, Kiril Veselinov, Rozenn Piron, Charles Cornet, et al.. Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers. SPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77202F, ⟨10.1117/12.863580⟩. ⟨hal-00492346⟩
  • Jean-Philippe Gauthier, Cyril Paranthoën, Christophe Levallois, Jean-Michel Lamy, Hervé Folliot, et al.. Polarization controlled quantum dashes VCSELs. 15th European Conference on Integrated Optics (ECIO 2010), Apr 2010, Cambridge, United Kingdom. ⟨hal-00485721⟩
  • Cheng Fang, Alain Le Corre, Dominique Yon. Copper electroplating into deep microvias for the ''SiP'' application. The 2010 International workshop on "Materials for Advanced Metallization" (MAM 2010), Mar 2010, Mechelen, Belgium. pp.749-753, ⟨10.1016/j.mee.2010.07.034⟩. ⟨hal-00664411⟩
  • Cheng Fang, Alain Le Corre, Dominique Yon. Development of microvias copper electroplating technology for “System-in-Package” application. International Symposium on Advanced Packaging Materials: Microtech 2010 (APM '10), Feb 2010, Cambridge, United Kingdom. ⟨hal-01166459⟩
  • Nicolas Bertru, Cyril Paranthoën, Olivier Dehaese, Hervé Folliot, Alain Le Corre, et al.. QD laser on InP substrate for 1.55 µm emission and beyond. SPIE Photonics West - OPTO 2010, Jan 2010, San Francisco, United States. pp.76081B, ⟨10.1117/12.848398⟩. ⟨hal-00485660⟩
  • Georges Elias, Charles Cornet, Philippe Caroff, Christophe Levallois, Antoine Létoublon, et al.. Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm. Second French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23. ⟨hal-00491459⟩
  • Wei Lu, Ibrahim Alghoraibi, Georges Elias, Abdulhadi Nakkar, Antoine Létoublon, et al.. Transition fils boites dans le système InAs/InP (100). Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu. ⟨hal-00486673⟩
  • Weiming Guo, Antoine Letoublon, Charles Cornet, Tony Rohel, Nicolas Chevalier, et al.. Heterogeneous growth and characterisation of III-V material on Si (001) substrate for photonics applications. journées de la Société Française de métallurgie et matériaux (SF2M) 2009, Jun 2009, Rennes, France. pp.W. Guo. ⟨hal-00486672⟩
  • Weiming Guo, Charles Cornet, Antoine Létoublon, Tony Rohel, Nicolas Chevalier, et al.. Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon. EMRS, Jun 2009, Strasbourg, France. pp.1. ⟨hal-00491771⟩
  • Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Karine Tavernier, et al.. Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate. IPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩. ⟨hal-00485799⟩
  • Weiming Guo, Alexandre Bondi, Charles Cornet, Hervé Folliot, Antoine Létoublon, et al.. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE. 9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩. ⟨hal-00491426⟩
  • Jean-Michel Lamy, Cyril Paranthoen, Christophe Levallois, Soline Richard, Hervé Folliot, et al.. Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasers. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Sep 2008, Nottingham, United Kingdom. p 1-2, ⟨10.1109/NUSOD.2008.4668208⟩. ⟨hal-00490938⟩
  • Maud Gicquel-Guézo, Hanond Nong, Christophe Labbé, Alain Moréac, Alain Le Corre, et al.. Highlighting excitonic optical properties of bundled carbon nanotubes to tailor novel saturable absorbers. 9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2160, ⟨10.1002/pssc.200881708⟩. ⟨hal-00531462⟩
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Richard, Hervé Folliot, et al.. Light emitting diodes on silicon substrates: preliminary results. TNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩. ⟨hal-00491905⟩
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Richard, Hervé Folliot, et al.. Preliminary results for the realization of light emitters on silicon substrate. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00491914⟩
  • Georges Elias, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Ibrahim Alghoraibi, et al.. Self-organized growth of InAs quantum dots on InP(001). SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.G. Elias. ⟨hal-00486675⟩
  • Weiming Guo, Antoine Létoublon, Alexandre Bondi, Charles Cornet, Jacky Even, et al.. Growth and characterization of single phase GaP on Si(001). Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo. ⟨hal-00486678⟩
  • Rozenn Piron, Dayong Zhou, Madhoussoudhana Dontabactouny, Olivier Dehaese, Thomas Batte, et al.. 1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasers. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00494186⟩
  • Weiming Guo, Alexandre Bondi, Bassem Alsahwa, Charles Cornet, Antoine Létoublon, et al.. Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate. (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00491776⟩
  • Antoine Létoublon, C. Manivel, Weiming Guo, Wei Lu, Tony Rohel, et al.. Epifanix: a software tool for automated analysis of X-ray diffraction scans on epitaxial layers. Journées de l'association française de cristallographie AFC 2008, Jul 2008, Rennes, France. pp.A. Letoublon. ⟨hal-00486681⟩
  • Nicolas Bertru, Hervé Folliot, Tony Rohel, Alain Le Corre, Wei Lu, et al.. Émission de boites quantiques au delà de 1.55 µm. Journées Nano-Micro et Optoélectronique, Jun 2008, Oléron, France. ⟨hal-00489409⟩
  • Weiming Guo, Alexandre Bondi, Hervé Folliot, Charles Cornet, Antoine Létoublon, et al.. Croissance par MBE de Boites quantiques InP sur GaP/Si. journées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1. ⟨hal-00491778⟩
  • Georges Elias, Nicolas Bertru, Alain Le Corre, Antoine Letoublon, Ibrahim Alghoraibi, et al.. Epitaxie des boites quantiques hautes performances InAs/InGaAsP/InP(100) pour des applications laser. Journée nanosciences de bretagne (JNB2),, Jun 2008, Nantes, France. ⟨hal-00486169⟩
  • Dayong Zhou, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Estelle Homeyer, et al.. Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm. Indium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩. ⟨hal-00492842⟩
  • Alexandre Bondi, Weiming Guo, Hervé Folliot, Charles Cornet, Christophe Labbe, et al.. Photoluminescence de nanostructures sur substrat GaP/Si. Journées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1. ⟨hal-00489402⟩
  • Jean-Michel Lamy, Cyril Paranthoën, Christophe Levallois, Abdulhadi Nakkar, Hervé Folliot, et al.. InAs quantum wires on InP substrate for VCSEL applications. Indium Phosphide & Related Materials IPRM, 2008, Versailles, France. pp.1, ⟨10.1109/ICIPRM.2008.4703028⟩. ⟨hal-00485271⟩
  • Jean-Michel Lamy, Olivier Castany, Cyril Paranthoën, Christophe Levallois, Abdulhadi Nakkar, et al.. Réalisation d'un VCSEL à pompage électrique, accordable en longueurd'onde pour la bande C. Journées Nationales Optique Guidée JNOG, 2008, Lannion, France. ⟨hal-00485286⟩
  • Wei Lu, Antoine Létoublon, Nicolas Bertru, Hervé Folliot, Alain Le Corre, et al.. InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP. 2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu. ⟨hal-00486709⟩
  • Slimane Loualiche, Alain Le Corre, Jacky Even, Jean-Claude Simon, Abderrahim Ramdane. Novel nanostructures quantum dot based devices. Optics East 2007, Sep 2007, Boston, United States. pp.67790D, ⟨10.1117/12.734329⟩. ⟨hal-00486894⟩
  • Georges Elias, Antoine Létoublon, Philippe Caroff, Ibrahim Alghoraibi, Nicolas Bertru, et al.. Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm. LWQD, International SANDIE Workshop on Long Wave Length Quantum Dots : Growth and Application, Jul 2007, Rennes, France. pp.G. Elias. ⟨hal-00486707⟩
  • Abdulhadi Nakkar, Hervé Folliot, Alain Le Corre, Ibrahim Alghoraibi, Christophe Labbé, et al.. Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescence. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1. ⟨hal-00491995⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. Comparative study of Single- and Double-capped InAs/InP (311)B QD lasers: effects on lasing characteristics. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1. ⟨hal-00491814⟩
  • Slimane Loualiche, Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, et al.. InAs/InP quantum dot laser grown on (113)B InP substrate. LWQD : International workshop on long wavelength quantum dots : Growth and applications, Jul 2007, Rennes, France. ⟨hal-00486908⟩
  • François Doré, Olivier Dehaese, Tony Rohel, Jacky Even, Nicolas Bertru, et al.. InAs nanostructures on InP(100) for long wavelength (1.5-2.1µm) optoelectronic applications. Long Wavelength Quantum Dots, Jul 2007, Rennes, France. pp.1. ⟨hal-00496872⟩
  • Anne Ponchet, Nicolas Bertru, Alain Le Corre. Transmission electron microscopy observation of InAs quantum dots grown on (100) and (113)B InP. International workshop on long wavelength quantum dots, Jul 2007, Rennes, France. ⟨hal-00486160⟩
  • Antoine Létoublon, Philippe Caroff, Nicolas Bertru, Olivier Dehaese, Tony Rohel, et al.. Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm. 14th European Molecular Beam Epitaxy Workshop, Mar 2007, Sierra Nevada, Spain. pp.A. Letoublon. ⟨hal-00486711⟩
  • Charles Cornet, Olivier Dehaese, Laurent Pedesseau, Ibrahim Alghoraibi, Tony Rohel, et al.. Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dots. euro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1. ⟨hal-00491810⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Cyril Paranthoen, et al.. Lasers à boites quantiques sur InP, de très faibles courants de seuil et émettant à 1.55 µm. 25 ème Journées Nationales de l'Optique Guidées (JNOGs), Nov 2006, Metz, France. pp.1. ⟨hal-00491800⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Cyril Paranthoen, Olivier Dehaese, et al.. Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. LEOS 2006 (Lasers & Eloctro-Optics Society), Oct 2006, Montreal, Canada. pp.870-71, ⟨10.1109/LEOS.2006.279083⟩. ⟨hal-00491812⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Jacky Even, Cyril Paranthoen, et al.. Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasers. ESLW 2006 (European Semiconductor Laser Workshop), Sep 2006, Nice, France. pp.1. ⟨hal-00491806⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Cyril Paranthoen, et al.. Recent progress in QD broad area lasers. ePIXnet annual meeting, Sep 2006, Lausanne, Switzerland. ⟨hal-00491803⟩
  • Jean-Michel Lamy, Christophe Levallois, Abdulhadi Nakkar, Philippe Caroff, Cyril Paranthoen, et al.. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization. Trends in Nanotechnology 2006, Sep 2006, Grenoble, France. p 1-2. ⟨hal-00491366⟩
  • Jean-Michel Lamy, Christophe Levallois, Abdulhadi Nakkar, Philippe Caroff, Cyril Paranthoen, et al.. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization. Trends in Nanotechnology 2006, Sep 2006, Grenoble, France. pp.1672-1676, ⟨10.1002/pssa.200675343⟩. ⟨hal-00488399⟩
  • Christophe Labbé, Charles Cornet, Hervé Folliot, Philippe Caroff, Christophe Levallois, et al.. Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitation. ICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩. ⟨hal-00491873⟩
  • François Doré, Jacky Even, Charles Cornet, Andrei Schliwa, Nicolas Bertru, et al.. A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate. 28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩. ⟨hal-00491466⟩
  • Adalberto Brunetti, Maria Vladimirova, Denis Scalbert, Hervé Folliot, Alain Le Corre. Optically enhanced nuclear spin polarization in InP. 28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna, Austria. pp.1347-1348, ⟨10.1063/1.2730402⟩. ⟨hal-00440489⟩
  • Christophe Labbé, Charles Cornet, Hervé Folliot, Jacky Even, Philippe Caroff, et al.. Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation. 28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩. ⟨hal-00491468⟩
  • Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Lasers à Boîtes Quantiques InAs/InP émettant à 1.55µm : effet de la température et du nombre de plans de boîtes. Journées des Nanosciences de Bretagne, Jun 2006, Rennes, France. pp.1. ⟨hal-00491797⟩
  • Christophe Levallois, Soline Richard, Alain Le Corre, Slimane Loualiche, Bertrand Caillaud, et al.. Design and fabrication of a tunable InP-based VCSEL using a electro-optic index modulator. Indium Phosphide and Related Materials Conference 2006, May 2006, Pinceton, United States. p64 - 67, ⟨10.1109/ICIPRM.2006.1634112⟩. ⟨hal-00489384⟩
  • François Doré, Charles Cornet, Philippe Caroff, A. Ballestar, Jacky Even, et al.. InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence. 4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩. ⟨hal-00491729⟩
  • Nicolas Bertru, Ibrahim Alghoraibi, Philippe Caroff, Cyril Paranthoën, Hervé Folliot, et al.. Low threshold current density (311)B QD lasers. Sixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, Apr 2006, Nottingham, United Kingdom. ⟨hal-00485670⟩
  • Antoine Létoublon, Philippe Caroff, Nicolas Bertru, Tony Rohel, Alain Le Corre, et al.. Boîtes quantiques InAs/InP(113) pour l'émission à 1.55 µm : contrôle de la croissance et caractérisation Structurale. 11ème JNMO (Journées Nano-Micro Electronique et Optoélectronique ), Apr 2006, Aussois, France. ⟨hal-00486720⟩
  • Christophe Levallois, Vivien Verbrugge, Laurent Dupont, Jean-Louis de Bougrenet de La Tocnaye, Bertrand Caillaud, et al.. 1.55-µm optically pumped tunable VCSEL based on a nano-polymer dispersive liquid crystal phase modulator. Photonics Europe, Apr 2006, Strasbourg, France. pp.61850W, ⟨10.1117/12.662232⟩. ⟨hal-00488203⟩
  • Christophe Levallois, Philippe Caroff, Cyril Paranthoen, Hervé Folliot, Olivier Dehaese, et al.. Growth of quantum wires for long-wavelength VCSEL with a polarized laser emission. International Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), Mar 2006, Paris, France. p 1-2. ⟨hal-00491379⟩
  • Christophe Labbé, Charles Cornet, Hervé Folliot, Philippe Caroff, Christophe Levallois, et al.. Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitation. IWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1. ⟨hal-00491870⟩
  • Charles Cornet, Christophe Levallois, Philippe Caroff, Laurent Joulaud, Hervé Folliot, et al.. Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing properties. Sandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1. ⟨hal-00504470⟩
  • Ibrahim Alghoraibi, Laurent Joulaud, Cyril Paranthoën, Alain Le Corre, Olivier Dehaese, et al.. InAs self-assembled quantum dot and quantum dash lasers on InP for 1.55 µm optical telecommunications. International Conference on Information & Communication Technologies: from Theory to Applications ((ICTTA), 2006, Damascus, Syria. pp.2085, ⟨10.1109/ICTTA.2006.1684723⟩. ⟨hal-00485709⟩
  • Ibrahim Alghoraibi, Laurent Joulaud, Cyril Paranthoën, Alain Le Corre, Olivier Dehaese, et al.. Self-Organization in Growth of InAs quantum dot and quantum dash lasers on InP for 1,55 µm optical telecommunications. The third Workshop on laser science and applications, 2006, Damascus, Syria. ⟨hal-00485703⟩
  • Laurent Joulaud, Cyril Paranthoën, Estelle Homeyer, Rozenn Piron, Frederic Grillot, et al.. Performances of InAs/InP quantum dot and quantum dash lasers. International Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France. ⟨hal-00485313⟩
  • Philippe Caroff, Estelle Homeyer, Cyril Paranthoën, Rozenn Piron, Frederic Grillot, et al.. Ultra-low threshold current density 1.55 µm InAs quantum dot lasers grown on InP. International Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France. ⟨hal-00485693⟩
  • François Doré, Charles Cornet, Andrei Schliwa, A. Ballestar, Jacky Even, et al.. InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence. 32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩. ⟨hal-00491737⟩
  • Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm. 32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.407-10, ⟨10.1002/pssc.200564151⟩. ⟨hal-00491820⟩
  • Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Study in temperature of a laser in a single layout of InAs quantum boxes on InP substrate emitting at 1,55 µm. 9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.193-194, ⟨10.1051/jp4:2006135053⟩. ⟨hal-00491825⟩
  • François Doré, Charles Cornet, Philippe Caroff, A. Ballestar, Jacky Even, et al.. First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate. "Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1. ⟨hal-00504462⟩
  • Christophe Levallois, Alain Le Corre, Olivier Dehaese, Hervé Folliot, Cyril Paranthoen, et al.. Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée. 9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. p. 125-126, ⟨10.1051/jp4:2006135025⟩. ⟨hal-00491469⟩
  • François Doré, Charles Cornet, A. Ballestar, Jacky Even, Olivier Dehaese, et al.. First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrate. Narrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1. ⟨hal-00504441⟩
  • Christophe Levallois, Alain Le Corre, Slimane Loualiche, Olivier Dehaese, Hervé Folliot, et al.. Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg Reflectors. International Workshop on PHysics & Applications of SEmiconductor LASERS, Mar 2005, Metz, France. p1. ⟨hal-00491400⟩
  • Jacky Even, Charles Cornet, François Doré, Andrei Schliwa, A. Ballestar, et al.. InAsSb/InP quantum dots for midwave infrared emitters : a theoretical study. Mid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1. ⟨hal-00504452⟩
  • Patrice Miska, Kiril Veselinov, Frederic Grillot, Jacky Even, Charly Platz, et al.. Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasers. PHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1. ⟨hal-00504411⟩
  • Charles Cornet, Christophe Labbé, Charly Platz, Jacky Even, Hervé Folliot, et al.. Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniques. journée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1. ⟨hal-00504407⟩
  • Gautier Moreau, Jean-Claude Simon, Charly Platz, Olivier Dehaese, Nicolas Bertru, et al.. Etude du gain d'un milieu amplificateur à boîtes quantiques. 23èmes Journées Nationales d'Optique Guidée (JNOG 2004) [ http://www.comelec.enst.fr/jnog2004/ ], Oct 2004, Paris, France. pp.55-57. ⟨hal-00148602⟩
  • Christophe Levallois, Alain Le Corre, Slimane Loualiche. Laser à cavité verticale accordable en longueur d'onde. Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, Montpellier, France. p. 207-208. ⟨hal-00491477⟩
  • Charly Platz, Philippe Caroff, Cyril Paranthoën, Gautier Moreau, Nicolas Bertru, et al.. Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement. 10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France. ⟨hal-00149423⟩
  • Gautier Moreau, Charly Platz, Olivier Dehaese, Nicolas Bertru, Alain Le Corre, et al.. Laser et amplificateurs à Ilots Quantiques. Colloque de l'Action Spécifique n°36 CNRS-STIC " Communications Numériques Optiques et Systèmes "Tout Optique" " (COSTO), Dec 2003, Paris, France. ⟨hal-00148590⟩
  • Gautier Moreau, Charly Platz, Olivier Dehaese, Nicolas Bertru, Alain Le Corre, et al.. Etude Expérimentale du Gain d'un Guide Plan à Base d'Îlots quantiques InAs/InP(311)B dans le domaine spectral 1.55 µm. 8ème COlloque sur les Lasers et l'Optique Quantique (COLOQ 8), Sep 2003, Toulouse, France. ⟨hal-00149413⟩
  • Gautier Moreau, Jean-Claude Simon, Charly Platz, Olivier Dehaese, Nicolas Bertru, et al.. Etude expérimentale du gain d'un guide plan à base d'îlots quantiques InAs/InP(311)B dans le domaine spectral 1.55 µm. Journée Thématique de l'Action Spécifique n° 13 CNRS-STIC " Boites quantiques pour les télécommunications optiques ", Jun 2003, Marcoussis, France. ⟨hal-00148942⟩
  • Gautier Moreau, Charly Platz, Olivier Dehaese, Nicolas Bertru, Patrice Miska, et al.. Etude de l'émission laser par pompage optique de guides semi-conducteur à îlots quantiques InAs/InP à 1,52 µm. Journée Thématique de l'Action Spécifique n° 13 CNRS-STIC " Boites quantiques pour les télécommunications optiques ", Jun 2003, Marcoussis, France. ⟨hal-00148945⟩
  • Vivien Verbrugge, Jean-Louis de Bougrenet de La Tocnaye, Laurent Dupont, Alain Le Corre, O. Dehease, et al.. VCSEL accordable à base de nano cristal liquide dispersé dans un polymère. JNMO, Oct 2002, St Aygulf, France. ⟨hal-02129777⟩
  • Charly Platz, Nicolas Bertru, Olivier Dehaese, Alain Le Corre, Cyril Paranthoën, et al.. Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B. 9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France. ⟨hal-00148526⟩
  • Cyril Paranthoën, Charly Platz, Gautier Moreau, Olivier Dehaese, Alain Le Corre, et al.. Caractérisations optiques des boites quantiques InAs/InP émettant à 1.55 µm. 9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France. ⟨hal-00148534⟩
  • Cyril Paranthoen, Charly Platz, Gautier Moreau, Nicolas Bertru, Olivier Dehaese, et al.. Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser. 12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩. ⟨hal-00151117⟩
  • Gautier Moreau, Jean-Claude Simon, Charly Platz, Cyril Paranthoën, Olivier Dehaese, et al.. Etude de l'Emission Laser par Pompage Optique de Guides Semiconducteurs à Îlots Quantiques InAs/InP Emettant à 1,52 µm. 21èmes Journées Nationales d'Optique Guidée (JNOG 2002), Sep 2002, Dijon, France. pp.116-118. ⟨hal-00151071⟩
  • Charly Platz, Olivier Dehaese, Alain Le Corre, Cyril Paranthoën, Jacky Even, et al.. Lasers à îlots quantiques InAs/InP émettant à 1.53µm sur la transition fondamentale. 8èmes Journées de la Matière Condensée (JMC8), Sep 2002, Marseille, France. ⟨hal-00151208⟩
  • Charly Platz, Olivier Dehaese, Alain Le Corre, Cyril Paranthoen, Jacky Even, et al.. Fundamental emission of InAs/InP quantum dots laser at 1.52 µm. 26th International Conference on the Physics of Semiconductors (ICPS-26), Aug 2002, Edinburgh, United Kingdom. ⟨hal-00151203⟩
  • Charly Platz, Olivier Dehaese, Nicolas Bertru, Patrice Miska, Alain Le Corre, et al.. Laser à îlots quantiques InAs/InP émettant à 1.52µm. Journée Thématique " Boîtes quantiques pour les télécommunications optiques ", May 2002, Rennes, France. ⟨hal-00151192⟩

Poster communications14 document

  • Mickael da Silva, S. Boyer-Richard, C. Cornet, Antoine Létoublon, Christophe Levallois, et al.. Towards III-V on silicon solar cells. 7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015. ⟨hal-01660154⟩
  • Ronan Tremblay, Tony Rohel, Yoan Léger, Alain Le Corre, Rozenn Bernard, et al.. Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots. 31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France. ⟨hal-01707905⟩
  • Mickael da Silva, Charles Cornet, Antoine Létoublon, Christophe Levallois, Alain Rolland, et al.. GaAsPN Single and Tandem Solar Cells on Silicon. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01496922⟩
  • Ronan Tremblay, Jean-Philippe Burin, Tony Rohel, Jean-Philippe Gauthier, Samy Almosni, et al.. AlGaP-growth and doping by MBE. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497057⟩
  • Ronan Tremblay, Tony Rohel, Yoan Léger, Alain Le Corre, Rozenn Bernard, et al.. Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497049⟩
  • Rozenn Bernard, Yanping Wang, Mounib Bahri, Thanh Tra Nguyen, Ronan Tremblay, et al.. GaP/Si Antiphase domains annihilation at the early stages of growth. Summer School of the French Epitaxy Network, Sep 2015, Porquerolles, France. ⟨hal-02497252⟩
  • Mickael da Silva, Samy Almosni, Charles Cornet, Antoine Létoublon, Christophe Levallois, et al.. Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de silicium. Optique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France. ⟨hal-01497238⟩
  • Samy Almosni, Charles Cornet, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, et al.. Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on silicon. Euro-MBE 2015, Mar 2015, Canazei, Italy. 2015. ⟨hal-01147439⟩
  • Samy Almosni, Cédric Robert Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Development of GaAsPN alloy for its integration in III-V/Si tandem solar cell. Workshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France. ⟨hal-01115014⟩
  • Kamil Klaime, Dame Thiam, Rozenn Piron, Cyril Paranthoen, Thomas Batte, et al.. Single and Double Section InAs Quantum Dots Mode‐Locked Laser Elaborated on Misoriented (001) InP Substrate. International Symposium on Physics and Applications of Laser Dynamics 2013 (IS-PALD 2013), Oct 2013, Paris, France. ⟨hal-01165707⟩
  • Kamil Klaime, Rozenn Piron, Dame Thiam, Cyril Paranthoen, Olivier Dehaese, et al.. Lasers à blocage de modes bi-section à base de boites quantiques InAs sur InP (001) désorienté émettant à 1,64 µm à des taux de répétitions de 22,6 GHz. Optique Paris XIII - 33è Journées Nationales d'Optique Guidée (JNOG'33), Jul 2013, Villetaneuse, France. ⟨hal-01167850⟩
  • Kamil Klaime, Rozenn Piron, Dame Thiam, Cyril Paranthoen, Nicolas Chevalier, et al.. Lasers à blocage de modes mono-section à base de boites quantiques InAs sur InP émettant dans la bande L à un taux de répétition de 102 GHz. Journées Boîtes Quantiques 2013 (JBQ 2013), Jun 2013, Paris, France. ⟨hal-01165712⟩
  • Cédric Robert Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, et al.. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. 25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩. ⟨hal-00918662⟩
  • Kamil Klaime, Cosimo Calo, Rozenn Piron, Cyril Paranthoen, Dame Thiam, et al.. InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. Compound Semiconductor Week 2013 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), May 2013, Kobe, Japan. IEEE (ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562595⟩. ⟨hal-01167841⟩

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