Hybrid materials, taking advantage of the different physical properties of its individual components, are very attractive for many applications in science and technology today. In this work, we demonstrate that bi-domain III-V/Si epitaxial layers are hybrid structures, composed of photo-active bulk semiconductors with 2D, topological and vertical semi-metallic inclusions, endowed with ambipolar properties. By combining structural, transport and photoelectrochemical characterizations with ab initio calculations, we show that III–V/Si bi-domain materials are capable, within the same layer, of absorbing light efficiently and of laterally separating carriers. photo-generated, and transfer them to the semi-metallic singularities, which facilitates the extraction of electrons and holes vertically, leading to efficient carrier collection. The topological properties of 2D semi-metallic inclusions are also discussed. This alveolar heterostructure combines both the excellent optical properties of semiconductors and the good transport properties of metallic materials. It also allows us to hope to benefit from both the high yields or tunability offered by inorganic III-V materials, and the flexible management at the nanoscale usually offered by blends of organic materials. The physical properties of these new hybrid heterostructures may be of great interest for energy harvesting, photonic and electronic devices or for computing.
Article published in: Advanced Science